During a thermoluminscence experiment, one typically obtains several glow curves under different conditions. This expression refers to cell B3 which contains the absolute temperature T K. Chen and McKeever have summarized the curve fitting procedures commonly used to analysze multipeak TL glow curves.
Analysis of a General order TL peak 3. For the numerical calculation of the TL intensity one needs the evaluation of the integral This integral cannot be solved in an analytical form. This gap is found between the two energy bands; called conduction band and valence band. Ranjit Singha, Professor, Dept.
Hole traps are called luminescence center in this process [4,5,6,8]. The user controls the value of the parameter E by changing the value in cell I2, and the whole spreadsheet calculation is automatically updated. Graph both the experimental data and the calculated general order TL glow curve on the same graph and compare them. The quantities in area for different values of b are shown in subsequent columns.
The function for a second-order kinetic glow peak Inserting the approximation 6 into the general order kinetic equation 2 with b D 2 one obtains the second-order kinetic equation The condition for the maximum see Chen and Winer [6] is From equation 16 one obtains the following relations And By inserting equation 17 into equation 15 I T finally takes the form The second-order kinetic equation 15 at the peak maximum position Im is [6] Thus by inserting equation 18 into equation 20 Im becomes From equation 21 one obtains By inserting equation 22 into equation 19 one obtains the final form of the second-order kinetics function for use in the GCD analysis C. In this chapter, these stages and output of this light emission will be discussed briefly.
During a thermoluminscence experiment, one typically obtains several glow curves under different conditions. For the numerical calculation of the TL intensity one needs the evaluation of the integral This integral cannot be solved in an analytical form. Let us denote by N the total concentration of the traps in the crystal m-3 , by n t the concentration of filled traps in the crystal in m -3 at time t, and by nh t the concentration of the trapped holes in the recombination center in m This expression refers to cell B3 which contains the absolute temperature T K.
In this chapter, these stages and output of this light emission will be discussed briefly. The quantities in area for different values of b are shown in subsequent columns. In the mid gap, the electron trap is believed close to the conduction band and the hole trap is far from the valence band. When heat is increased, the electron trapped in the electron trap is released to conduction band.
Posted by: Zugar | on October 2, 2012
Electron-hole pair production is the formation of mobile holes and electrons in the crystal structure of the material after radiation. On the other hand; in the conduction band, electrons are free to move and have ability to produce electric current.
In addition, there exists a mid gap state caused by defects which may be created by pre-existing impurities or radiation induced defects. Such procedures are more likely to yield accurate result in the case of linear superposition of first-order Randall-Wikins- type mathematical expressions.
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Let us denote by N the total concentration of the traps in the crystal m-3 , by n t the concentration of filled traps in the crystal in m -3 at time t, and by nh t the concentration of the trapped holes in the recombination center in m
Hole traps are called luminescence center in this process [4,5,6,8].
A-Energy Storage There are two ways for the stabilization of this absorbed energy: Electron-hole pair production is the formation of mobile holes and electrons in the crystal structure of the material after radiation.
This process is illustrated in the figure 2. Alias, before irradiation, materials have localized electronic energy states and after irradiation, some of these states are occupied by a non- equilibrium concentration of electrons.